Ozone-Based Atomic Layer Deposition of Crystalline V2O5 Films for High Performance Electrochemical Energy Storage
Chen, X; Pomerantseva, E; Banerjee, P; Gregorczyk, K; Ghodssi, R; Rubloff, G
| HERO ID | 4255026 |
|---|---|
| In Press | No |
| Year | 2012 |
| Title | Ozone-Based Atomic Layer Deposition of Crystalline V2O5 Films for High Performance Electrochemical Energy Storage |
| Authors | Chen, X; Pomerantseva, E; Banerjee, P; Gregorczyk, K; Ghodssi, R; Rubloff, G |
| Journal | Chemistry of Materials |
| Volume | 24 |
| Issue | 7 |
| Page Numbers | 1255-1261 |
| Abstract | A new atomic layer deposition (ALD) process for V2O5 using ozone (O-3) as oxidant has been developed that resulted in crystalline V2O5 thin films which are single-phase and orthorhombic on various substrates (silicon, Au-coated stainless steel, and anodic aluminum oxide (AAO)) without any thermal post-treatment. Within a fairly narrow temperature window (170-185 degrees C), this low temperature process yields a growth rate of similar to 0.27 angstrom/cycle on Si. It presents good uniformity on planar substrates. Excellent conformality enables deposition into high aspect ratio (AR) nanopores (AR > 100), as needed for fabrication of three-dimensional (3D) nanostructures for next generation electrochemical energy storage devices. V2O5 films obtained using O-3-based ALD showed superior electrochemical performance in lithium cells, with initial specific discharge capacity of 142 mAh/g in the potential range of 2.6-4.0 V, as well as excellent rate capability and cycling stability. These benefits are attributed primarily to the crystallinity of the material and to fast transport through the thin active storage layers used. |
| Doi | 10.1021/cm202901z |
| Wosid | WOS:000302487500002 |
| Is Certified Translation | No |
| Dupe Override | No |
| Is Public | Yes |
| Keyword | atomic layer deposition; vanadium oxide; ozone; electrochemical energy storage |