Capacitance and Conductance-Frequency Characteristics of Au/n-Si Schottky Structure with Perylene-Diimide (PDI) Organic Interlayer
Yuksel, OF; Kus, M; Yildirim, M
| HERO ID | 3576048 |
|---|---|
| In Press | No |
| Year | 2017 |
| Title | Capacitance and Conductance-Frequency Characteristics of Au/n-Si Schottky Structure with Perylene-Diimide (PDI) Organic Interlayer |
| Authors | Yuksel, OF; Kus, M; Yildirim, M |
| Journal | Journal of Electronic Materials |
| Volume | 46 |
| Issue | 2 |
| Page Numbers | 882-887 |
| Abstract | We report the interface properties of a perylene-diimide thin film between Au and n-Si substrate fabricated by the spin coating method. The relaxation time (tau) and interface trap density (D (it)) characteristics of the fabricated structure were obtained across various voltage ranges (0.0 V-300 mV) and various frequency ranges (1 kHz-1 MHz). We observed a peak in G (it)/omega versus log (f) plots from 0.0 V to 300 mV. This peak shows the presence of the interface state and its relaxation time. We observed a decrease in values at the same time as an increase in N (ss) values with the increasing applied voltage for the sample. The N (ss) and tau values found to be in the ranges 1.50 x 10(12) eV(-1) cm(-2)-2.83 x 10(12) eV(-1) cm(-2) and 2.83 x 10(-6) s-4.82 x 10(-7) s between 0.0 V and 0.3 V, respectively. |
| Doi | 10.1007/s11664-016-4999-y |
| Wosid | WOS:000392291200024 |
| Is Certified Translation | No |
| Dupe Override | No |
| Is Public | Yes |
| Keyword | Schottky device; perylene-diimide; spin coating; interface trap density; relaxation time |