Solution processed white light photodetector based N, N '-di(2-ethylhexyl)-3,4,9,10-perylene diimide thin film phototransistor
Tozlu, Cem; Kus, M; Can, M; Ersoz, M
| HERO ID | 3576021 |
|---|---|
| In Press | No |
| Year | 2014 |
| Title | Solution processed white light photodetector based N, N '-di(2-ethylhexyl)-3,4,9,10-perylene diimide thin film phototransistor |
| Authors | Tozlu, Cem; Kus, M; Can, M; Ersoz, M |
| Journal | Thin Solid Films |
| Volume | 569 |
| Page Numbers | 22-27 |
| Abstract | In this study, a solution-processed n-type photo-sensing organic thin film transistor was investigated using polymeric dielectric under different white light illuminations. N, N'-di (2-ethylhexyl)-3,4,9,10-perylene diimide and divinyl tetramethyl disiloxane-bis (benzo-cyclobutene) were used as a soluble active organic semiconductor and as a dielectric material, respectively. Stable amplification was observed in the visible region without gate bias by the device. The electrical characterization results showed that an n-type phototransistor with a saturated electron mobility of 0.6 x 10(-3) cm(2)/V.s and a threshold voltage of 1.8 V was obtained. The charge carrier density of the channel of the device exhibited photo-induced behaviors that strongly affected the electrical properties of the transistor. The photosensitivity and photoresponsivity values of the device were 63.82 and 24 mA/W, respectively. These findings indicate that perylene diimide is a promising material for use on organic based phototransistors. (C) 2014 Elsevier B.V. All rights reserved. |
| Doi | 10.1016/j.tsf.2014.07.055 |
| Wosid | WOS:000344749400005 |
| Url | http://www.sciencedirect.com/science/article/pii/S0040609014007871 |
| Is Certified Translation | No |
| Dupe Override | No |
| Is Public | Yes |
| Keyword | Phototransistor; Perylene diimide; Photosensor |