Solution-processable hole-transporting material containing fluorenyl core and triple-carbazolyl terminals: synthesis and application to enhancement of electroluminescence
Wu, CS; Fang, SW; Chen, Y
| HERO ID | 3539638 |
|---|---|
| In Press | No |
| Year | 2013 |
| Title | Solution-processable hole-transporting material containing fluorenyl core and triple-carbazolyl terminals: synthesis and application to enhancement of electroluminescence |
| Authors | Wu, CS; Fang, SW; Chen, Y |
| Journal | Physical Chemistry Chemical Physics |
| Volume | 15 |
| Issue | 36 |
| Page Numbers | 15121-15127 |
| Abstract | A novel solution-processable, efficient hole-transporting material 2,4,7-tri[2-(9-hexylcarbazole)ethenyl]-9,9-dihexylfluorene (FC), composed of a fluorenyl core and triple-carbazolyl terminals, is successfully synthesized and well characterized. The FC is a thermally stable, amorphous material because of its aromatic and asymmetric structure. The highest occupied molecular orbital (HOMO) level of FC is -5.21 eV, as determined by cyclic voltammetry, implying its applicability as a hole-transporting layer (HTL) to promote hole injection. Furthermore, the FC could be deposited by a spin-coating process to obtain a homogeneous HTL film, more convenient and cost-effective than conventional NPB which must be deposited by vacuum vapor deposition. When fabricated as multi-layer OLED [ITO/PEDOT:PSS/HTL(25 nm)/Alq3(50 nm)/LiF(0.5 nm)/Al(100 nm)], the maximum brightness (21,400 cd m(-2)) and current efficiency (3.20 cd A(-1)) based on the FC are superior to those using conventional NPB as the hole-transporting layer. In addition, a homogeneous FC film is readily prepared by simple wet processes (spin-coating). Our results indicate that the FC is a promising optoelectronic material which is readily processed by wet methods such as spin-coating. |
| Doi | 10.1039/c3cp52087k |
| Pmid | 23925249 |
| Wosid | WOS:000323520600032 |
| Is Certified Translation | No |
| Dupe Override | No |
| Is Public | Yes |
| Language Text | English |